AON1634 30v n-channel mosfet v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 54m w r ds(on) (at v gs =4.5v) < 62m w r ds(on) (at v gs =2.5v) < 82m w symbol v ds the AON1634 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g d s v ds v gs i dm t j , t stg symbol t 10s steady-state c/w maximum junction-to-ambient a d 110 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 56 88 70 parameter typ max w v drain-source voltage 30 t a =25c v 4 3 t a =25c t a =70c 12 gate-source voltage a continuous drain current g i d t a =70c 1.15 1.8 junction and storage temperature range 16 pulsed drain current c -55 to 150 power dissipation a p d general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.7 1.05 1.5 v i d(on) 16 a 43.5 54 t j =125c 68 84 48 62 m w 62 82 m w g fs 15 s v sd 0.75 1 v i s 2.5 a c iss 245 pf c oss 35 pf c rss 20 pf r g 5.3 w q g (10v) 5.7 10 nc q g (4.5v) 2.6 5 nc q gs 0.5 nc q gd 1 nc t d(on) 2 ns t r 3.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4a m a v ds =v gs , i d =250 m a v ds =0v, v gs =10v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =4a zero gate voltage drain current gate-body leakage current v ds =5v, i d =4a forward transconductance v gs =4.5v, i d =3a v gs =2.5v, i d =2a total gate charge i s =1a,v gs =0v turn-on rise time gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage v gs =10v, v ds =15v, r l =3.75 w , t r 3.5 ns t d(off) 22 ns t f 3.5 ns t rr 6.5 ns q rr 7.5 nc body diode reverse recovery time i f =4a, di/dt=500a/ m s turn-off fall time body diode reverse recovery charge i f =4a, di/dt=500a/ m s turn-off delaytime turn-on rise time v gs =10v, v ds =15v, r l =3.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON1634 30v n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 8 10 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =2.5v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =2.5v i d =2a v gs =4.5v i d =3a v gs =10v i d =4a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.0v 2.5v 10v 4.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =4a 25 c 125 c AON1634 30v n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =15v i d =4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 1s ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =110 c/w AON1634 30v n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr AON1634 30v n-channel mosfet www.freescale.net.cn 5 / 5
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